FDD10AN06A0 - SMD N channel transistors

FDD10AN06A0
Description

Transistor: N-MOSFET; unipolar; 60V; 50A; 135W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 60V
Drain current 50A
Power dissipation 135W
Case DPAK
Gate-source voltage ±20V
On-state resistance 27mΩ
Mounting SMD
Gate charge 4.6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat