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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / FDC658AP

FDC658AP - SMD P channel transistors

FDC658AP
Description

Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -30V
Drain current -4A
Power dissipation 1.6W
Case SuperSOT-6
Gate-source voltage ±25V
On-state resistance 75mΩ
Mounting SMD
Gate charge 8.1nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat