Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / FDC6561AN

FDC6561AN - Multi channel transistors

FDC6561AN
Description

Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 30V
Drain current 2.5A
Power dissipation 0.96W
Case SuperSOT-6
Gate-source voltage ±20V
On-state resistance 152mΩ
Mounting SMD
Gate charge 3.2nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat