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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FDC655BN

FDC655BN - SMD N channel transistors

FDC655BN
Description

Transistor: N-MOSFET; unipolar; 30V; 6.3A; 1.6W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 30V
Drain current 6.3A
Power dissipation 1.6W
Case SuperSOT-6
Gate-source voltage ±20V
On-state resistance 36mΩ
Mounting SMD
Gate charge 13nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat