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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / FDC6401N

FDC6401N - Multi channel transistors

FDC6401N
Description

Transistor: N-MOSFET x2; unipolar; 20V; 3A; 0.96W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 20V
Drain current 3A
Power dissipation 0.96W
Case SuperSOT-6
Gate-source voltage ±12V
On-state resistance 106mΩ
Mounting SMD
Gate charge 4.6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat