FDC637AN - SMD N channel transistors

FDC637AN
Description

Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 20V
Drain current 6.2A
Power dissipation 1.6W
Case SuperSOT-6
Gate-source voltage ±20V
On-state resistance 41mΩ
Mounting SMD
Gate charge 16nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat