FDC6318P - Multi channel transistors

FDC6318P
Description

Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -12V
Drain current -2.5A
Power dissipation 0.96W
Case SuperSOT-6
Gate-source voltage ±8V
On-state resistance 0.2Ω
Mounting SMD
Gate charge 8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat