FDC608PZ - SMD P channel transistors

FDC608PZ
Description

Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -20V
Drain current -5.8A
Power dissipation 1.6W
Case SuperSOT-6
Gate-source voltage ±12V
On-state resistance 43mΩ
Mounting SMD
Gate charge 23nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat