FDC606P - SMD P channel transistors

FDC606P
Description

Transistor: P-MOSFET; unipolar; -12V; -6A; 1.6W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -12V
Drain current -6A
Power dissipation 1.6W
Case SuperSOT-6
Gate-source voltage ±8V
On-state resistance 53mΩ
Mounting SMD
Gate charge 25nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat