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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / FDC5614P

FDC5614P - SMD P channel transistors

FDC5614P
Description

Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -60V
Drain current -3A
Power dissipation 1.6W
Case SuperSOT-6
Gate-source voltage ±20V
On-state resistance 0.19Ω
Mounting SMD
Gate charge 24nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat