FDC3601N - Multi channel transistors

FDC3601N
Description

Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 100V
Drain current 1A
Power dissipation 0.96W
Case SuperSOT-6
Gate-source voltage ±20V
On-state resistance 976mΩ
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat