FDB52N20TM - SMD N channel transistors

FDB52N20TM
Description

Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UniFET™
Polarisation unipolar
Drain-source voltage 200V
Drain current 52A
Power dissipation 357W
Case D2PAK
Gate-source voltage ±30V
On-state resistance 49mΩ
Mounting SMD
Gate charge 63nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat