FDB33N25TM - SMD N channel transistors

FDB33N25TM
Description

Transistor: N-MOSFET; unipolar; 250V; 33A; 235W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UniFET™
Polarisation unipolar
Drain-source voltage 250V
Drain current 33A
Power dissipation 235W
Case D2PAK
Gate-source voltage ±30V
On-state resistance 94mΩ
Mounting SMD
Gate charge 48nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat