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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FDB28N30TM

FDB28N30TM - SMD N channel transistors

FDB28N30TM
Description

Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UniFET™
Polarisation unipolar
Drain-source voltage 300V
Drain current 28A
Power dissipation 250W
Case D2PAK
Gate-source voltage ±30V
On-state resistance 0.129Ω
Mounting SMD
Gate charge 50nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat