FDB13AN06A0 - SMD N channel transistors

FDB13AN06A0
Description

Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 60V
Drain current 62A
Power dissipation 115W
Case D2PAK
Gate-source voltage ±20V
On-state resistance 34mΩ
Mounting SMD
Gate charge 29nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat