FDB035AN06A0 - SMD N channel transistors

FDB035AN06A0
Description

Transistor: N-MOSFET; unipolar; 60V; 80A; 310W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 60V
Drain current 80A
Power dissipation 310W
Case D2PAK
Gate-source voltage ±20V
On-state resistance 7.1mΩ
Mounting SMD
Gate charge 124nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat