Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FDB0190N807L

FDB0190N807L - SMD N channel transistors

FDB0190N807L
Description

Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 80V
Drain current 190A
Pulsed drain current 1.44kA
Power dissipation 250W
Case D2PAK-6
Gate-source voltage ±20V
On-state resistance 4.3mΩ
Mounting SMD
Gate charge 249nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat