FDA69N25 - THT N channel transistors

FDA69N25
Description

Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 44.2A
Pulsed drain current 276A
Power dissipation 480W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 41mΩ
Mounting THT
Gate charge 0.1µC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat