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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FDA59N30

FDA59N30 - THT N channel transistors

FDA59N30
Description

Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 300V
Drain current 35A
Pulsed drain current 236A
Power dissipation 500W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 56mΩ
Mounting THT
Gate charge 0.1µC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat