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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FDA38N30

FDA38N30 - THT N channel transistors

FDA38N30
Description

Transistor: N-MOSFET; unipolar; 300V; 22A; Idm: 150A; 312W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology DMOS
UniFET™
Polarisation unipolar
Drain-source voltage 300V
Drain current 22A
Pulsed drain current 150A
Power dissipation 312W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 85mΩ
Mounting THT
Gate charge 60nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat