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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FDA28N50

FDA28N50 - THT N channel transistors

FDA28N50
Description

Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology DMOS
UniFET™
Polarisation unipolar
Drain-source voltage 500V
Drain current 17A
Pulsed drain current 112A
Power dissipation 310W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 155mΩ
Mounting THT
Gate charge 105nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat