FCPF11N60F - THT N channel transistors

FCPF11N60F
Description

Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology SJ-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 7A
Pulsed drain current 33A
Power dissipation 36W
Case TO220FP
Gate-source voltage ±30V
On-state resistance 0.38Ω
Mounting THT
Gate charge 52nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat