FCP260N65S3 - THT N channel transistors

FCP260N65S3
Description

Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 12A
Pulsed drain current 30A
Power dissipation 90W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.26Ω
Mounting THT
Gate charge 24nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat