FCP20N60 - THT N channel transistors

FCP20N60
Description

Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology SuperFET®
Polarisation unipolar
Drain-source voltage 600V
Drain current 20A
Power dissipation 208W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 0.19Ω
Mounting THT
Gate charge 98nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat