FCP11N60 - THT N channel transistors

FCP11N60
Description

Transistor: N-MOSFET; unipolar; 650V; 11A; 125W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology SuperFET®
Polarisation unipolar
Drain-source voltage 650V
Drain current 11A
Power dissipation 125W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 0.38Ω
Mounting THT
Gate charge 52nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat