FCD900N60Z - SMD N channel transistors

FCD900N60Z
Description

Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 3.5A
Pulsed drain current 13.5A
Power dissipation 52W
Case DPAK
Gate-source voltage ±20V
On-state resistance 0.9Ω
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat