FCB260N65S3 - SMD N channel transistors

FCB260N65S3
Description

Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 12A
Pulsed drain current 30A
Power dissipation 90W
Case D2PAK
Gate-source voltage ±30V
On-state resistance 0.26Ω
Mounting SMD
Gate charge 24nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat