EM6K6T2R - Multi channel transistors

EM6K6T2R
Description

Transistor: N-MOSFET x2; unipolar; 20V; 300mA; Idm: 0.6A; 150mW

Specifications
Manufacturer ROHM SEMICONDUCTOR
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 20V
Drain current 0.3A
Pulsed drain current 0.6A
Power dissipation 0.15W
Case SOT563
Gate-source voltage ±8V
On-state resistance 1.4Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat