EL-MAKR02120PA - THT N channel transistors

EL-MAKR02120PA
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 231A; 465W

Specifications
Manufacturer EVERLIGHT
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 90A
Pulsed drain current 231A
Power dissipation 465W
Case TO247-4
Gate-source voltage -4...18V
On-state resistance 50mΩ
Mounting THT
Gate charge 0.22µC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat