ECH8695R-TL-W - Multi channel transistors

ECH8695R-TL-W
Description

Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 24V
Drain current 11A
Pulsed drain current 60A
Power dissipation 1.4W
Case ECH8
Gate-source voltage ±12.5V
On-state resistance 9.1mΩ
Mounting SMD
Gate charge 10nC
Kind of package reel
tape
Kind of channel enhancement
Semiconductor structure common drain
Application charging control
Version ESD
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Development and design: Seventh Cat