IXFN40N110Q3 - Transistor modules MOSFET

IXFN40N110Q3
Description

Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 1.1kV
Drain current 35A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 0.26Ω
Pulsed drain current 100A
Power dissipation 960W
Technology HiPerFET™
Q3-Class
Kind of channel enhancement
Gate charge 300nC
Reverse recovery time 434ns
Gate-source voltage ±40V
Mechanical mounting screw
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Development and design: Seventh Cat