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Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
| Manufacturer |
IXYS |
| Type of semiconductor module |
MOSFET transistor |
| Semiconductor structure |
single transistor |
| Drain-source voltage |
100V |
| Drain current |
360A |
| Case |
SOT227B |
| Electrical mounting |
screw |
| Polarisation |
unipolar |
| On-state resistance |
2.6mΩ |
| Pulsed drain current |
900A |
| Power dissipation |
830W |
| Technology |
GigaMOS™ HiPerFET™ |
| Kind of channel |
enhancement |
| Gate charge |
525nC |
| Reverse recovery time |
130ns |
| Gate-source voltage |
±30V |
| Mechanical mounting |
screw |