IXFN210N30P3 - Transistor modules MOSFET

IXFN210N30P3
Description

Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 300V
Drain current 192A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 14.5mΩ
Pulsed drain current 550A
Power dissipation 1.5kW
Technology HiPerFET™
Polar3™
Kind of channel enhancement
Gate charge 268nC
Reverse recovery time 250ns
Gate-source voltage ±30V
Mechanical mounting screw
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Development and design: Seventh Cat