IXFN140N30P - Transistor modules MOSFET

IXFN140N30P
Description

Module; single transistor; 300V; 110A; SOT227B; screw; Idm: 300A

Specifications
Manufacturer IXYS
Type of semiconductor module MOSFET transistor
Semiconductor structure single transistor
Drain-source voltage 300V
Drain current 110A
Case SOT227B
Electrical mounting screw
Polarisation unipolar
On-state resistance 24mΩ
Pulsed drain current 300A
Power dissipation 700W
Technology HiPerFET™
Polar™
Kind of channel enhancement
Gate charge 185nC
Reverse recovery time 200ns
Gate-source voltage ±30V
Mechanical mounting screw
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Development and design: Seventh Cat