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Home / Catalog / TME catalog / Semiconductors / Integrated circuits / Memories - integrated circuits / DRAM memories - integrated circuits / 4C128M16D3LC-12BIN

4C128M16D3LC-12BIN - DRAM memories - integrated circuits

4C128M16D3LC-12BIN
Description

IC: DRAM memory; 2GbDRAM; 128Mx16bit; 1.35V; 800MHz; 13.75ns

Specifications
Manufacturer ALLIANCE MEMORY
Type of integrated circuit DRAM memory
Kind of memory DDR3L
SDRAM
Memory 2Gb DRAM
Memory organisation 128Mx16bit
Operating voltage 1.35V
Clock frequency 800MHz
Access time 13.75ns
Case FBGA96
Mounting SMD
Operating temperature -40...95°C
Kind of package in-tray
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