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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / FGA60N65SMD

FGA60N65SMD - THT IGBT transistors

FGA60N65SMD
Description

Transistor: IGBT; 650V; 60A; 300W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 60A
Power dissipation 300W
Case TO3PN
Gate-emitter voltage ±20V
Pulsed collector current 180A
Mounting THT
Gate charge 284nC
Kind of package tube
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat