AOD5B65N1 - SMD IGBT transistors

AOD5B65N1
Description

Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 5A
Power dissipation 21W
Case TO252
Gate-emitter voltage ±30V
Pulsed collector current 15A
Mounting SMD
Gate charge 9.2nC
Kind of package reel
tape
Turn-on time 23ns
Turn-off time 114ns
Collector-emitter saturation voltage 2.5V
Turn-off switching energy 0.049mJ
Turn-on switching energy 0.081mJ
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Development and design: Seventh Cat