AOD5B60D - SMD IGBT transistors

AOD5B60D
Description

Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ

Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 5A
Power dissipation 21.7W
Case TO252
Gate-emitter voltage ±20V
Pulsed collector current 20A
Mounting SMD
Gate charge 9.4nC
Kind of package reel
tape
Turn-on time 27ns
Turn-off time 124ns
Collector-emitter saturation voltage 1.55V
Turn-off switching energy 0.04mJ
Turn-on switching energy 0.14mJ
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat