IRF9530NPBF - THT P channel transistors

IRF9530NPBF
Description

Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage -100V
Drain current -14A
Power dissipation 79W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.2Ω
Mounting THT
Gate charge 38.7nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat