IRF5305PBF - THT P channel transistors

IRF5305PBF
Description

Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage -55V
Drain current -31A
Power dissipation 110W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 60mΩ
Mounting THT
Gate charge 42nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat