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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / THT P channel transistors / IRF5210PBF

IRF5210PBF - THT P channel transistors

IRF5210PBF
Description

Transistor: P-MOSFET; unipolar; -100V; -40A; 200W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage -100V
Drain current -40A
Power dissipation 200W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 60mΩ
Mounting THT
Gate charge 0.12µC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat