MMBFJ177LT1G - SMD P channel transistors

MMBFJ177LT1G
Description

Transistor: P-JFET; unipolar; 1.5mA; 0.225W; SOT23; Igt: 50mA

Specifications
Manufacturer ONSEMI
Type of transistor P-JFET
Polarisation unipolar
Drain current 1.5mA
Power dissipation 0.225W
Case SOT23
Gate-source voltage 30V
On-state resistance 300Ω
Mounting SMD
Kind of package reel
tape
Gate current 50mA
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Development and design: Seventh Cat