Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRLB3813PBF

IRLB3813PBF - THT N channel transistors

IRLB3813PBF
Description

Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 260A
Power dissipation 230W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 1.95mΩ
Mounting THT
Gate charge 57nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices logic level
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat