IRFP260NPBF - THT N channel transistors

IRFP260NPBF
Description

Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 35A
Power dissipation 300W
Case TO247AC
Gate-source voltage ±20V
On-state resistance 40mΩ
Mounting THT
Gate charge 234nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat