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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRFB4110PBF

IRFB4110PBF - THT N channel transistors

IRFB4110PBF
Description

Transistor: N-MOSFET; unipolar; 100V; 130A; 370W; TO220AB

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 130A
Power dissipation 370W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 4.5mΩ
Mounting THT
Gate charge 150nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat