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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / IRF840PBF

IRF840PBF - THT N channel transistors

IRF840PBF
Description

Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 500V
Drain current 5.1A
Pulsed drain current 32A
Power dissipation 125W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 0.85Ω
Mounting THT
Gate charge 63nC
Kind of package tube
Kind of channel enhancement
Heatsink thickness 1.14...1.4mm
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Development and design: Seventh Cat