BS170 - THT N channel transistors

BS170
Description

Transistor: N-MOSFET; unipolar; 60V; 500mA; Idm: 1.2A; 0.83W; TO92

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology DMOS
Polarisation unipolar
Drain-source voltage 60V
Drain current 0.5A
Pulsed drain current 1.2A
Power dissipation 0.83W
Case TO92
Gate-source voltage ±20V
On-state resistance
Mounting THT
Kind of package bulk
Kind of channel enhancement
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Development and design: Seventh Cat