FDS8949 - Multi channel transistors

FDS8949
Description

Transistor: N-MOSFET x2; unipolar; 40V; 6A; 2W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 40V
Drain current 6A
Power dissipation 2W
Case SO8
Gate-source voltage ±20V
On-state resistance 43mΩ
Mounting SMD
Gate charge 11nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat