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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / FDS4935BZ

FDS4935BZ - Multi channel transistors

FDS4935BZ
Description

Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -30V
Drain current -6.9A
Power dissipation 1.6W
Case SO8
Gate-source voltage ±25V
On-state resistance 35mΩ
Mounting SMD
Gate charge 40nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat