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Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.215A; Idm: 1.2A
| Manufacturer |
NEXPERIA |
| Type of transistor |
N-MOSFET x2 |
| Technology |
Trench |
| Polarisation |
unipolar |
| Drain-source voltage |
60V |
| Drain current |
0.215A |
| Pulsed drain current |
1.2A |
| Power dissipation |
445mW |
| Case |
SC88 SOT363 TSSOP6 |
| Gate-source voltage |
±20V |
| On-state resistance |
2Ω |
| Mounting |
SMD |
| Gate charge |
0.6nC |
| Kind of package |
reel tape |
| Kind of channel |
enhancement |
| Version |
ESD |